Holly Edwards

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Holly Edwards
Holly Edwards

Materials Laboratory Technical Lead

MPhys (Hons), PhD

work Bidston

work +44151 652 0641
cell +447467 869 028

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Career Summary

Curriculum Vitae

Holly Edwards is a qualified Materials Scientist who leads the Material testing and analysis team at The Lab. 

Background

Holly has extensive expertise in analysis techniques and the use of various equipment ranging from LIBS to SEM.  She joined Brookes Bell in 2022 and has quickly developed a reputation for excellence and integrity in her field. 

Holly graduated in 2016 with a MPhys (Hons) degree in Physics and subsequently submitted her PhD thesis on photovoltaics in March 2022.  During her time at university, she has worked on many collaborative research projects with other universities and industries, locally and internationally. 

Prior to working for Brookes Bell, Holly ran the ultrahigh vacuum laboratory at the Stephenson Institute for Renewable Energy.  There she optimised synthesis methods for thin films and crystals, performed analysis using a variety of materials science techniques, and also performed these analyses for external samples simultaneously.

Academic Qualifications

  • Condensed Matter Physics, PhD
  • Physics, MPhys (Hons)

Courses/Conferences Attended

  • X-ray Photoelectron Spectroscopy and Surface Analysis for Researchers in Industry Workshop, SCI.
  • 11th European Kesterite Kesterite Workshop.
  • NanoEnergy – Aalto University, Finland. (presentation)
  • Invited talk – IIT New Delhi, India.
  • NanoeEnergy – University of Liverpool. UK. (poster)

Research Publications

  1. M. J. Smiles, J. M. Skelton, H. Shiel, L. A. H. Jones, J. E. N. Swallow, H. J. Edwards, P. A. E. Murgatroyd, P. K. Thakur, T.-L. Lee, V. R. Dhanak, T. D. Veal, “Ge 4s2 lone pairs and band alignments in GeS and GeSe,” J. Mater. Chem. A, vol. 9, no. 39, pp 22440-22452, 2021; https://doi.org/10.1039/D1TA05955F
  2. P. Tiwary, N. Chakrabarty, H. J. Edwards, V. R. Dhanak, A. Kar, R. Mahapatra, A. Chakraborty, “Hydrothermally Grown Uniform Sized Nickel Hydroxide/Oxyhydroxide Hexagonal Nanoprisms Exhibiting Room Temperature Ethanol Sensing Properties,” Appl. Surf. Sci., vol. 570, p. 151090, 2021; https://doi.org/10.1016/j.apsusc.2021.151090
  3. S. Biswas, A. D. Paul, P. Das, H. J. Edwards, I. Z. Mitrovic, V. R. Dhanak, R. Mahapatra, "Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs," IEEE Trans. Electron Devices, pp. 1-7, 2021; DOI: 10.1109/TED.2021.3084554
  4. R. Garza-Hernández, H. J. Edwards, J. T. Gibbon, M. R. Alfaro Cruz, V. R. Dhanak, F. S. Aguirre Tostado, “Tunable crystal structure of Cu2SnS3 thin films deposited by spray pyrolysis and its impact on the chemistry and electronic structure,” J. Alloys Compd., vol. 881, p. 160552, 2021; DOI: 10.1016/j.jallcom.2021.160552
  5. A. D. Paul, S. Biswas, P. Das, H. J. Edwards, D. Dalal, S. Maji, V. R. Dhanak, A. Mondal, R. Mahapatra, “Improved resistive switching characteristic of Ag/Al:HfOx/ITO/PET ReRAM for flexible electronics application,” Semicond. Sci. and Technol., vol. 36, no. 6, pp. 65006, 2021; DOI: 10.1088/1361- 6641/abf662
  6. C. Tong, H. J. Edwards, T. D. C. Hobson, O. S. Hutter, K. Durose, V. R. Dhanak, J. D. Major, K. P. McKenna, “Density Functional Theory and Experimental Determination of Band Gaps and Lattice Parameters in Kesterite Cu2ZnSn(SxSe1-x)4,”J. Phys. Chem. Lett., vol. 11, no. 24, pp. 10463–10468, 2020; doi: 10.1021/acs.jpclett.0c03205
  7. A. D. Paul, S. Biswas, P. Das, H. J. Edwards, V. R. Dhanak, R. Mahapatra, “Effect of Aluminium Doping on Performance of HfO-Based Flexible Resistive Memory Devices,” IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 4222-4227, 2020; doi: 10.1109/TED.2020.3015824
  8. S. Campbell, Y. Qu, J. Gibbon, H. J. Edwards, V. R. Dhanak, D. Tiwari, V. Barrioz, N. S. Beattie, G. Zoppi, “Defect Limitations in Cu2ZnSn(S,Se)4 Solar Cells Utilizing a In2S3 Buffer Layer”, J. Appl. Phys., vol. 127, no. 205305, 2020; https://doi.org/10.1063/5.0002372
  9. J. E. N. Swallow, B. A. D. Williamson, S. Sathasivam, M. Birkett, T. J. Featherstone, P. A. E. Murgatroyd, H. J. Edwards, Z. W. Lebens-Higgins, D. A. Duncan, M. Farnworth, P. Warren, N. Peng, T.-L. Lee, L. F. J. Piper, A. Regoutz, C. J. Carmalt, I. P. Parkin, V. R. Dhanak, D. O. Scanlon, T. D. Veal, “Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3,” Mater. Horiz., vol. 7, pp. 236-243, 2020; https://doi.org/10.1039/C9MH01014A
  10. J. Y. Zhang, W. W. Li, R. L. Z. Hoye, J. L. MacManus-Driscoll, M. Buddle, O. Bierwagen, L. Wang, Y. Du, M. J. Wahila, L. F. J. Piper, T.-L. Lee, H. J. Edwards, V. R. Dhanak, K. H. L. Zhang, “Electronic and transport properties of Li-doped NiO epitaxial thin films”, J. Mater. Chem. C, vol. 6, no. 9, pp. 2275-2282, 2018; https://doi.org/10.1039/C7TC05331B
  11. Q. D. Gibson, M. S. Dyer, G. F. S. Whitehead, J. Alaria, M. Pitcher, H. J. Edwards, J. B. Claridge, M. Zanella, K. Dawson, T. D. Manning, V. R. Dhanak, M. J. Rosseinsky, “Bi4O4Cu1.7Se2.7Cl0.3: Intergrowth of BiOCuSe and Bi2O2Se Stabilized by the Addition of a Third Anion,” J. Am. Chem. Soc., vol. 139, no. 44, pp. 15568-15571, 2017; https://doi.org/10.1021/jacs.7b06168
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